学历:
2000.09－2004.07 山东大学 学士：物理学
2004.09－2009.01 复旦大学 博士：微电子学与固体电子学
2015.05－2016.04 加州大学洛杉矶分校 访问学者
工作经历:
2025.01~ 厦门大学电子科学与技术学院教授
2021.03~2025.01 华为-海思技术有限公司
2017.03~2021.03 中国科学院大学岗位教授
2016.01~2021.03 中国科学院微电子研究所研究员
2012.10~2016.01 中国科学院微电子研究所副研究员
2012.03~2012.10 中国科学院微电子研究所助理研究员
2010.03~2012.03 中国科学院微电子研究所博士后
2009.01~2010.01 复旦大学微电子系助理研究员
研究方向：
存储器技术、存算一体技术，三维集成技术，高k介质材料、铁电材料
学术兼职：
1. IEEE International Memory Workshop (IMW) TPC member（2018~2021）；
2. IEEE Electron Devices Technology and Manufacturing (ETDM 2021) Memory Session Chair ;
3. IEEE Senior Member。
成果奖励
1. 国家杰出青年科学基金；
2. 国家高层次青年人才项目；
3. 国家自然基金委优秀青年科学基金；
4. 中国科学院卢嘉锡青年人才奖；
5. 中国科学院青促会优秀会员；
6. 中国科学院杰出科技成就奖。
项目主持情况:
1. 国家自然科学基金杰出青年科学基金，400万；（2021-2025）
2. 国家自然科学基金重点基金项目，290万；（2019-2023）
3. 国家重大专项02专项课题，2400万； （2017-2019）
4. 国家重大专项02专项子课题，738万；（2017-2019）
5. 科技部重点研发计划纳米专项青年科学家项目，461万；（2016-2021）
6. 北京市科委项目，400万；（2017-2018）
7. 国家自然科学基金优秀青年基金项目，150万；（2016-2018）
8. 国家自然科学基金面上项目，80万；（2014-2017）
9. 国家863项目子课题，320万；（2011-2015）
10. 国家自然科学基金青年基金项目，33万。（2012-2014）
代表性论文（部分）：
1) Zhaomeng Gao, Tianjiao Xin, Kai Du, Qiwendong Zhao, Yiwei Wang, Cheng Liu, Yilin Xu, Rui Wang, Guangjie Shi, Yunzhe Zheng, Yonghui Zheng, Yan Cheng*, Hangbing Lyu*, Polar axis orientation control of hafnium-based ferroelectric capacitors with in-situ AC electric bias during rapid thermal annealing, 2024 IEEE Symposium on VLSI Technology (VLSI-T), T2.2.
2) Zhaomeng Gao†, Weifeng Zhang†, Qilan Zhong, Yonghui Zheng, Shuxian Lv, Qiqiao Wu, Yanling Song, Shengjie Zhao, Yunzhe Zheng, Tianjiao Xin, Yiwei Wang, Wei Wei, Xinqian Ren, Jianguo Yang, Chen Ge, Jiahua Tao, Yan Cheng*, Hangbing Lyu*. Giant electroresistance in hafnia-based ferroelectric tunnel junctions via enhanced polarization. Device, 1:100004, 2023.
3) Yonghui Zheng, Tianjiao Xin, Jing Yang, Yunzhe Zheng, Zhaomeng Gao, Yiwei Wang, Yilin Xu, Yan Cheng*, Kai Du, Diqing Su, Ruiwen Shao, Bingxing Zhou, Zhen Yuan, Qilan Zhong, Cheng Liu, Rong Huang, Xiaodong Tang, Chungang Duan, Sannian Song, Zhitang Song, Hangbing Lyu*, In-situ atomic-level observation of reversible first-order transition in Hf0. 5Zr0. 5O2 ferroelectric film, 2022 International Electron Devices Meeting (IEDM), 2022, 6.3.1-6.3.4.
4) Tianjiao Xin, Yonghui Zheng, Yan Cheng*, Kai Du, Yiwei Wang, Zhaomeng Gao, Diqing Su, Yunzhe Zheng, Qilan Zhong, Cheng Liu, Rong Huang, Chungang Duan, Sannian Song, Zhitang Song, Hangbing Lyu*, Atomic visualization of the emergence of orthorhombic phase in Hf0.5Zr0.5O2 ferroelectric film with in-situ rapid thermal annealing, 2022 IEEE Symposium on VLSI Technology (VLSI-T), 343-344.
5) Yan Cheng, Zhaomeng Gao, Kun Hee Ye, Hyeon Woo Park, Yonghui Zheng, Yunzhe Zheng, Jianfeng Gao, Min Hyuk Park, Jung-Hae Choi, Kan-Hao Xue, Cheol Seong Hwang*, Hangbing Lyu*, Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film, NATURE COMMUNICATIONS, 13(1), p.645. 2022.
6) Yunzhe Zheng, Yonghui Zheng, Zhaomeng Gao, Jun-Hui Yuan, Yan Cheng*, Qilan Zhong, Tianjiao Xin, Yiwei Wang, Cheng Liu, Yaru Huang, Rong Huang, Xiangshui Miao, Kan-Hao Xue, Hangbing Lyu*, Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf0.5Zr0.5O2 films: vacancy generation and lattice dislocation, 2021 IEEE International Electron Devices Meeting (IEDM), 33.5. 1-33.5.4.
7) Zhaomeng Gao, Yubo Luo, Shuxian Lyu, Yan Cheng*, Yonghui Zheng, Qilan Zhong, Weifeng Zhang, Hangbing Lyu*, Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf0.5Zr0.5O2 Film, IEEE Electron Device Letters, 42(9), pp.1303-1306.
8) Yunzhe Zheng, Chaorong Zhong, Yonghui Zheng, Zhaomeng Gao, Yan Cheng*, Qilan Zhong, Cheng Liu, Yiwei Wang, Ruijuan Qi, Rong Huang, Hangbing Lyu*, In-situ atomic visualization of structural transformation in Hf0.5Zr0.5O2 ferroelectric thin film: from nonpolar tetragonal phase to polar orthorhombic phase, 2021 Symposium on VLSI Technology (VLSI-T), 1-2.
9) Jianguo Yang, Xiaoyong Xue, Xiaoxin Xu, Qiao Wang, Haijun Jiang, Jie Yu, Danian Dong, Feng Zhang, Hangbing Lv*, Ming Liu, A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022 μm2 Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference, 2021 IEEE International Solid-State Circuits Conference (ISSCC), 24.2.
10) Qing Luo†, Yan Cheng†, Jianguo Yang, Rongrong Cao, Haili Ma, Yang Yang, Rong Huang, Wei Wei, Yonghui Zheng, Tiancheng Gong, Jie Yu, Xiaoxin Xu, Peng Yuan, Xiaoyan Li, Lu Tai, Haoran Yu, Dashan Shang, Qi Liu, Bing Yu, Qiwei Ren, Hangbing Lv* & Ming Liu*, A highly CMOS compatible hafnia-based ferroelectric diode, NATURE COMMUNICATIONS, 11, 2020.
11) Jianguo Yang, Deyang Chen, Qinting Ding, Jinbei Fang, Xiaoyong Xue*, Hangbing Lv*, Xiaoyang Zeng and Ming Liu, A Novel PUF Using Stochastic Short-Term Memory Time of Oxide-Based RRAM for Embedded Applications, Electron Devices Meeting (IEDM), IEEE International, 39.2, 2020.
12) Xiaoxin Xu, Jie Yu, Tiancheng Gong, Jianguo Yang Jiahao Yin, Da Nian Dong, Qing Luo, Jing Liu, Zhaoan Yu, Qi Liu, Hangbing Lv*, Ming Liu, First Demonstration of OxRRAM Integration on 14nm FinFet Platform and Scaling Potential Analysis towards Sub-10nm Node, Electron Devices Meeting (IEDM), IEEE International, 24.3, 2020.
13) Jianguo Yang†, Dengyun Lei† , Deyang Chen , Jing Li , Haijun Jiang , Qingting Ding, Qing Luo, Xiaoyong Xue*, Hangbing Lv*, Xiaoyang Zeng and Ming Liu, A Machine-Learning-Resistant 3D PUF with 8-layer Stacking Vertical RRAM and 0.014% Bit Error Rate Using In-Cell Stabilization Scheme for IoT Security Applications, Electron Devices Meeting (IEDM), IEEE International, 28.6, 2020.
14) Keji Zhou†, Xiaoyong Xue†,*, Jianguo Yang, Xiaoxin Xu, Hangbing Lv*, Minge Jing, Jing Li, Xiaoyang Zeng*, and Ming Liu, High-Density 3-D Stackable Crossbar 2D2R nvTCAM With Low-Power Intelligent Search for Fast Packet Forwarding in 5G Applications, IEEE Journal of Solid-State Circuits, DOI:10.1109/JSSC.2020.3025756, 2020.
15) Yang Jianguo, Xue Xiaoyong*, Xu Xiaoxin, Lv Hangbing*, Zhang Feng, Zeng Xiaoyang, Chang Meng-Fan, Liu Ming, A 28nm 1.5Mb Embedded 1T2R RRAM with 14.8 Mb/mm2 Using Sneaking Current Suppression and Compensation Techniques, Symposium on VLSI Circuit (VLSI-C), USA, June 14-19, 2020.
16) Yang Jianguo†, Ding Qingting†, Gong Tiancheng, Luo Qing, Xue Xiaoyong, Gao Zhaomeng, Yu Haoran, Yu Jie, Xu Xiaoxin, Yuan Peng, Li, Xiaoyan, Tai Lu, Chung Steve S., Lv Hangbing*, Liu Ming*, Robust True Random Number Generator Using Stochastic Short-term Recovery of Charge Trapping FinFET for Advanced Hardware Security, Symposium on VLSI Technology (VLSI-T), USA, June 14-19, 2020.
17) Qing Luo†, Bing Chen†，Rongrong Cao, Xiaoyong Xue, Keji Zhou, Jianguo Yang, Xu Zheng1, Haoran Yu, Jie Yu, Tiancheng Gong, Xiaoxin Xu, Peng Yuan, Xiaoyan Li, Lu Tai, Qi Liu, Hangbing Lv*, Ming Liu*, Complementary Memory Cell Based on Field-Programmable Ferroelectric Diode for Ultra-Low Power Current-SA Free BNN Applications, Electron Devices Meeting (IEDM), IEEE International, 38.5, 2019.
18) Qing Luo, Jie Yu, Xumeng Zhang, Kan-Hao Xue, Jun-Hui Yuan, Yan Cheng, Tiancheng Gong, Hangbing Lv*, Xiaoxin Xu, Peng Yuan, Jiahao Yin, Lu Tai, Shibing Long, Qi Liu, Xiangshui Miao, Jing Li, Ming Liu*, Nb1-xO2 based Universal Selector with Ultra-high Endurance (>1012), high speed (10 ns) and Excellent Vth Stability, Symposium on VLSI Technology (VLSI-T), T236, 2019.
