个人简历：

厦门大学电子科学与技术学院教授，国家级青年人才。研究方向为铁电存储器件与单片三维集成技术。以第一作者发表多篇论文于《Nature Communications》、《Advanced Materials》、《Nano Convergence》、《IEEE EDL》和《IEEE TED》等期刊，及两个微电子领域顶级会议：IEEE IEDM与 IEEE VLSI Symposium。曾获IEEE VLSI Symposium Best Demo Paper Award与IEEE ICICDT Best Paper Award。

学历：

电子科技大学 电子信息工程 学士

新加坡国立大学 微电子 博士

研究方向：

铁电存储器件：氧化铪基铁电材料、器件设计、器件加工、建模仿真及其在存内计算中的应用。

单片三维集成：非晶氧化物半导体晶体管及其与存储器件的单片集成。

学术兼职：

担任 《IEEE EDL》、《IEEE TED》、《Journal of Semiconductors》等国际期刊同行评审人。

成果奖励：

2025 优秀青年科学基金项目（海外）

2024 IEEE ICICDT Best Paper Award

2022 IEEE VLSI Symposium Best Demo Paper Award

2019 Applied Materials - NUS Advanced Materials Corporate Lab Scholarship

课题项目：

优秀青年科学基金项目（海外）

代表性论文（部分）：

1. Z. Zhou, L. Li, Y. Feng, X. Wang, Z. Zheng, L. Jiao, H. Zheng, Y. Shi, K.-W.      Ang, and X. Gong, “Advancing the Frontiers of HfO₂-Based      Ferroelectric Memories: Innovative Concepts from Materials to      Applications,” Adv. Mater., vol. 37, no. 50, e09525, 2025.

2. Z. Zhou^*, H. Zhong^*, L. Jiao, Z.      Zheng, H. Yang, T. Kämpfe, K. Ni, X. Li, and X. Gong, “Charge-Domain      Content Addressable Memory Based on Ferroelectric Capacitive Memory for      Reliable and Energy-Efficient One-Shot Learning,” Nat. Commun., vol. 16, pp. 8047, 2025.

3. Z. Zheng^*, Z. Zhou^*,      Y. Chen, X. Wang, L. Jiao, D. Zhang, Y. Feng, and X. Gong, “Investigating      the Impact of 3D Trench Structures on HfO₂-Based Ferroelectric      Capacitors,” Nanoscale      Adv., vol. 7, pp. 7128-7133,      2025.

4. Z. Zhou, L. Jiao, Z. Zheng, Y. Chen, K. Han, Y. Kang, D. Zhang, X. Wang, Q.      Kong, C. Sun, J. Xie, and X. Gong, “Ferroelectric Capacitive Memories:      Devices, Arrays, and Applications,” Nano Convergence, vol. 12, no.      3, 2025.

5. Z. Zhou, L. Jiao, Z. Zheng, X. Wang, D. Zhang, K. Ni, and X. Gong,      “Investigation of Charge Trapping Aggravation Induced by Antiferroelectric      Switching with a Unified Ferroelectric and Antiferroelectric Model,” IEEE      Trans. Electron Devices, vol. 71, no. 8, pp. 4445–4452, 2024.

6. Z. Zhou^*, J. Xie^*, L. Jiao, K. Han, Y.      Kang, Z. Zheng, Q. Kong, X. Wang, B.-Y. Nguyen, and X. Gong, “First      Demonstration of BEOL-Compatible NV-SRAM Featuring Vertically Stacked ITO      FETs and HfO₂-Based Ferroelectric Capacitors for High Density      Monolithic 3D Integration,” in 2024 IEEE International Electron Devices      Meeting (IEDM), 2024.

7. L. Jiao^*, Z. Zhou^*,      Z. Zheng, X. Wang, J. Xie, D. Zhang, G, Q. Kong, G. Liang, and X. Gong,      “First Observation of the Temperature-Dependent Two-phase Switching of the      HfO₂-Based Ferroelectric Polarization: New Insights and      Modeling of the Switching Dynamics,” in 2024 IEEE International      Electron Devices Meeting (IEDM), 2024.

8. L. Jiao^*, Z. Zhou^*,      Z. Zheng, K. Han, Q. Kong, X. Wang, H. Xu, J. Zhang, C. Sun, Y. Kang, G.      Liang, and X. Gong, “First BEOL-Compatible IGZO Ferroelectric-Modulated      Diode with Drastically Enhanced Memory Window: Experiment, Modeling, and      Deep Understanding,” in 2023 IEEE International Electron Devices      Meeting (IEDM), pp. 24.6.1-24.6.4, 2023.

9. Z. Zhou, L. Jiao, Z. Zheng, X. Wang, D. Zhang, K. Ni, and X. Gong, “First      Study of the Charge Trapping Aggravation Induced by Anti-Ferroelectric      Switching in the MFIS Stack,” in 2023 IEEE Symposium on VLSI Technology      and Circuits (VLSI), pp. T2.2.1-T2.2.2, 2023.

10. Z. Zhou^*, L. Jiao^*, Q. Kong, Z. Zheng, K.      Han, Y. Chen, C. Sun, B.-Y. Nguyen, and X. Gong, “Non-Destructive-Read      1T1C Ferroelectric Capacitive Memory Cell with BEOL 3D Monolithically      Integrated IGZO Access Transistor for 4F² High-Density      Integration,” in 2023 IEEE Symposium on VLSI Technology and Circuits      (VLSI), pp. TFS1.3.1-TFS1.3.2, 2023.

11. Z. Zhou^*, L. Jiao^*, J. Zhou, Z. Zheng, Y.      Chen, K. Han, Y. Kang, and X. Gong, “Experimental Demonstration of An      Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar      Array Featuring High C_HCS/C_LCS, Fast Speed, and Long      Retention,” in 2022 IEEE Symposium on VLSI Technology and Circuits      (VLSI), pp. 537-538, 2022. (Best Demo Paper Award)

12. Z. Zhou^*, L. Jiao^*, J. Zhou, Q.      Kong, S. Luo, C. Sun, Z. Zheng, X. Wang, D. Zhang, G. Liu, G. Liang, and      X. Gong, “Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric      Tunnel Junction Modeling with Dynamic Response and Multi-Domain      Characteristics,” IEEE Electron Device Lett., vol. 43, no. 1, pp.      158–161, 2022.

13. J. Zhou^*, Z. Zhou^*,      L. Jiao, X. Wang, Y. Kang, H. Wang, K. Han, Z. Zheng, and X. Gong,      “Al-Doped and Deposition Temperature-Engineered HfO₂ Near      Morphotropic Phase Boundary with Record Dielectric Permittivity (~68),” in      2021 IEEE International Electron Devices Meeting (IEDM), pp.      13.4.1-13.4.4, 2021.

14. Z. Zhou^*, J. Zhou^*, X. Wang, H.      Wang, C. Sun, K. Han, Y. Kang, Z. Zheng, H. Ni, and X. Gong, “A      Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on      a HfAlO Ferroelectric Film,” IEEE Electron Device Lett., vol. 41,      no. 12, pp. 1837–1840, 2020.

15. J. Zhou^*, Z. Zhou^*,      X. Wang, H. Wang, C. Sun, K. Han, Y. Kang, and X. Gong, “Demonstration of      Ferroelectricity in Al-Doped HfO₂ with a Low Thermal Budget of      500 ℃,” IEEE Electron Device Lett., vol. 41, no. 7, pp. 1130–1133,      2020.

^*Equally contributed authors