学历：
中国科学院微电子研究所工学博士，微电子学与固体电子学专业
台湾交通大学联合培养博士，微电子学专业
南京理工大学工学学士，电子科学与技术专业
研究方向：
铁电薄膜与器件、氧化物半导体器件、神经形态器件、TCAD模拟仿真
主讲课程：
半导体物理与器件（本科生课）
半导体物理与器件工艺基础（校级一流本科课程）
半导体器件物理（研究生课）
成果奖励：
厦门大学第十四届青年教师教学技能比赛二等奖（2019）
厦门大学奖教金（2022）
教学教改项目：
厦门大学一流本科课程（2020）
厦门大学教学改革研究项目（本科教育）（2020）
科研项目：
福建省自然科学基金面上项目，2023-2026，主持
国家自然科学基金重点项目，2023-2027，主要参与
中央高校基本科研业务费专项，2019-2021，主持
国家重点研发计划政府间国合项目，2019-2022，主要参与
国家自然科学基金青年项目，2018-2020，主持
科学挑战专题项目，2016-2020，主要参与
中国博士后科学基金特别资助，2016-2017，主持
中国博士后科学基金面上资助，2015-2016，主持
代表作：
[1] K. W. Huang, Z. W. Zheng,* et al., “Artificial synaptic transistors based on konjac glucomannan for brain-inspired neuromorphic applications,” ACS Appl. Electron. Mater. 6, 1521 (2024).
[2] T. T. Cheng, Z. W. Zheng,* et al., “Reconfigurable logic-in-memory circuits with ferroelectric nanosheet field-effect transistors,” Phys. Scr. 99 125286 (2024).
[3] J. Chen, Z. W. Zheng,* et al., “A fully printed ZnO memristor synaptic array for neuromorphic computing application,” IEEE Electron Device Lett. 45, 1076 (2024).
[4] T. T. Cheng, Z. W. Zheng,* et al., “Comparative evaluation of ferroelectric negative capacitance MFMIS and MFIS transistors for analog/radio-frequency applications,” IEEE Trans. Nanotechnol. 23, 317 (2024).
[5] Q. Li, Z. W. Zheng,* et al., “Impact of random interface traps fluctuation on device variation of oxide-semiconductor ferroelectric field-effect transistor memories,” IEEE Electron Device Lett. 44, 1979 (2023).
[6] M. H. Li, Z. W. Zheng,* et al., “Physical insights into the performances of negative capacitance field effect transistors using single-domain versus multidomain models,” IEEE Trans. Electron Devices 70, 806 (2023).
[7] Q. Li, Z. W. Zheng,* et al., “Temperature effects on the performance of ferroelectric FET with random grain phase variation for non-volatile memory application,” Semicond. Sci. Technol. 38, 055012 (2023).
[8] M. H. Li, Z. W. Zheng,* et al., “The impact of charges at dielectric/channel interface on performance degradation in negative capacitance ferroelectric FETs,” Semicond. Sci. Technol. 38, 045003 (2023).
[9] Y. X. Ding, Z. W. Zheng,* et al., “Oxide-based synaptic transistors gated by solid biopolymer electrolytes,” J. Mater. Sci. 58, 11740 (2023).
[10] Q. Xu, Z. W. Zheng,* et al., “Effects of fluorine plasma pre-treatment on electrical properties of high-k-based InP metal-oxide-semiconductor device,” Appl. Surf. Sci. 585, 152688 (2022).
[11] Q. Xu, Z. W. Zheng,* et al., “Effect of an inserted Al2O3 passivation layer for atomic layer deposited HfO2 on indium phosphide,” Semicond. Sci. Technol. 36, 125015 (2021).
[12] G. Y. He, Z. W. Zheng,* et al., “Simultaneous analysis of multi-variables effect on the performance of multi-domain MFIS negative capacitance field-effect transistors,” IEEE J. Electron Devices Soc. 9, 741 (2021).
[13] Z. W. Shang, Z. W. Zheng,* et al., “Effect of plasma oxidation on tin-oxide active layer for thin-film transistor application,” J. Mater. Sci. 56, 6286 (2021).
[14] W. D. Liu, Z. W. Zheng,* et al., “Impact of series-connected ferroelectric capacitor in HfO2-based ferroelectric field-effect transistors for memory application,” IEEE J. Electron Devices Soc. 8, 1076 (2020).
[15] J. Ma, Z. W. Zheng,* et al., “Characteristic simulation of hybrid multilayer junctionless field effect transistors with negative capacitance effect,” IEEE Trans. Nanotechnol.19, 89 (2020).
[16] Z. W. Shang, Z. W. Zheng,* et al., “Performance investigation of an n-type tin-oxide thin film transistor by channel plasma processing,” IEEE J. Electron Devices Soc. 8, 485 (2020).
[17] Z. W. Shang, Z. W. Zheng,* et al., “Progress and challenges in p-type oxide-based thin film transistors,” Nanotechnol. Rev. 8, 422 (2019).
