教育背景：
09/2013-06/2017：北京交通大学，工学学士
09/2017-06/2022：中国科学院微电子研究所，硕博连读
工作经历：
08/2022-02/2025：华为技术有限公司，高级工程师
03/2025-至今：厦门大学电子科学与技术学院，助理教授
研究方向：
新型非挥发存储器技术
成果奖励：
[1] 中国科学院院长特别奖
[2] 王守武优秀奖
[3] 博士国家奖学金
[4] 硕士国家奖学金
代表作论文：
[1] Xu Y, Yang Y, Zhao S, et al. Improved Multi-bit Storage Reliability by Design of Ferroelectric Modulated Anti-ferroelectric Memory[C]//2021 IEEE International Electron Devices Meeting (IEDM), IEEE, 2021, pp. 6.2.1-6.2.4.
[2] Xu Y, Yang Y, Zhao S, et al. Improved multibit storage reliability by design of ferroelectric modulated antiferroelectric memory (extend paper)[J]. IEEE Transactions on Electron Devices, 2022, 69(4): 2145-2150.
[3] Xu Y, Yang Y, Zhao S, et al. Robust breakdown reliability and improved endurance in Hf0.5Zr0.5O2 ferroelectric using grain boundary interruption[J]. IEEE Transactions on Electron Devices, 2021, 69(1): 430-433.
[4] Xu Y, Bi J, Li Y, et al. The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer[J]. Microelectronics Reliability, 2019, 100: 113355.
[5] Xu Y, Bi J, Xi K, et al. The effects of γ-ray irradiation on graphene/n-Si Schottky diodes[J]. Applied Physics Express, 2019, 12(6): 061004.
[6] Xu Y, Bi J, Xu G, et al. Total ionization dose effects on charge storage capability of Al2O3/HfO2/Al2O3-based charge trapping memory cell[J]. Chinese Physics Letters, 2018, 35(11): 118501.
[7] Xu Y, Bi J, Xu G, et al. Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor[J]. Science China. Information Sciences, 2017, 60(12): 120401.
